MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING APPARATUS, AND PROGRAM

摘要

PROBLEM TO BE SOLVED: To inhibit the occurence of particles, enable easy control of film thickness uniformity on a substrate surface, and form a high quality thin film.SOLUTION: A cycle includes the step of: supplying a material gas containing predetermined chemical elements and halogen from a first nozzle to a substrate in a processing chamber; supplying an amine gas from a second nozzle to the substrate in the processing chamber; supplying an oxidation gas from the same nozzle as the second nozzle to the substrate in the processing chamber. In a manufacturing method of a semiconductor device, the cycle is conducted predetermined number of times to form a thin film on the substrate.