| 摘要 |
PROBLEM TO BE SOLVED: To form a film more uniformly on the wafer surface, by suppressing warpage of a wafer during a deposition process.SOLUTION: A wafer 20 mounted on a tray 21 is conveyed by a conveyance section 11 while being heated by means of a heater 12. In a region where the heater 12 is arranged, an inactive gas head 13 and a dispersion head 14 are arranged. The inactive gas head 13 blows inactive gas to the wafer 20 when the tray 21 passes directly below. The dispersion head 14 blows film-forming gas to the wafer 20 when the tray 21 passes directly below. In the wafer mounting surface of the tray 21, a recess is formed according to the warpage of the wafer 20 after inert gas is blown thereto by means of the inactive gas head 13. |
