| 摘要 |
A transistor device includes a semiconductor substrate, a gate structure, and first and second metal layers. The semiconductor substrate includes a substrate body having a plurality of drain and source regions alternately arranged in a checkerboard pattern and spaced apart from each other. The first metal layer is disposed on the substrate body and includes a plurality of first pattern elements and a first patterned region. The second metal layer is disposed on top of the first metal layer and has a plurality of second pattern elements and a second patterned region. |
