发明名称 |
Semiconductor Device Having an Interconnect Structure with TSV Using Encapsulant for Structural Support |
摘要 |
A semiconductor device includes a substrate and a via extending through the substrate. A first insulating layer is disposed on sidewalls of the via. An electrically conductive material is disposed in the via over the first insulating layer to form a TSV. A first interconnect structure is disposed over a first side of the substrate. A semiconductor die or a component is mounted to the first interconnect structure. An encapsulant is disposed over the first interconnect structure and semiconductor die or component. A second interconnect structure is disposed over the second side of the substrate. The second interconnect structure is electrically connected to the TSV. The second interconnect structure includes a second insulating layer disposed over the second surface of the substrate and TSV, and a first conductive layer disposed over the TSV and in contact with the TSV through the second insulating layer. |
申请公布号 |
US2014110861(A1) |
申请公布日期 |
2014.04.24 |
申请号 |
US201314143891 |
申请日期 |
2013.12.30 |
申请人 |
STATS CHIPPAC, LTD;STATS CHIPPAC, LTD. |
发明人 |
SUTHIWONGSUNTHORN NATHAPONG;MARIMUTHU PANDI C.;KU JAE HUN;OMANDAM GLENN;GOH HIN HWA;HENG KOCK LIANG;CAPARAS JOSE A. |
分类号 |
H01L21/48;H01L21/56;H01L23/498 |
主分类号 |
H01L21/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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