发明名称 |
SEMICONDUCTOR DEVICES AND METHODS FOR MANUFACTURING THE SAME |
摘要 |
Semiconductor devices and methods for manufacturing the same are disclosed. In one embodiment, the method comprises: sequentially forming a sacrificial layer and a semiconductor layer on a substrate; forming a first cover layer on the semiconductor layer; forming an opening extending into the substrate with the first cover layer as a mask; selectively removing at least a portion of the sacrificial layer through the opening, and filling an insulating material in a gap due to removal of the sacrificial layer; forming one of source and drain regions in the opening; forming a second cover layer on the substrate; forming the other of the source and drain regions with the second cover layer as a mask; removing a portion of the second cover layer; and forming a gate dielectric layer, and forming a gate conductor in the form of spacer on a sidewall of a remaining portion of the second cover layer. |
申请公布号 |
US2014110756(A1) |
申请公布日期 |
2014.04.24 |
申请号 |
US201213981808 |
申请日期 |
2012.07.24 |
申请人 |
ZHU HUILONG;LIANG QINGQING;ZHONG HUICAI;WU HAO;INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OFSCIENCES |
发明人 |
ZHU HUILONG;LIANG QINGQING;ZHONG HUICAI;WU HAO |
分类号 |
H01L29/66;H01L29/78 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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