| 摘要 |
PROBLEM TO BE SOLVED: To provide preferable dry etching of a self-organizing block-copolymer material.SOLUTION: The method comprises the steps of: forming on a substrate 23 a self-organizing block-copolymer layer 21 comprising at least two polymer components 24, 25 having mutually different etching resistances; and applying at least once each of first plasma etching of the self-organizing block-copolymer layer 21 using plasma formed substantially from an ashing gas, and second plasma etching of the self-organizing block-copolymer layer 21 using plasma formed from a pure inert gas or mixture of a plurality of inert gases to selectively remove a first polymer phase 25. |
