| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device suppressing write disturbance.SOLUTION: The nonvolatile semiconductor memory device comprises a control section that, in write operation, performs control for applying a first control voltage larger than a second voltage VM1 to a non-selected word line to a gate of a first transistor MCBG when a first voltage VPGM to a selected word line is applied to a memory cell adjacent to the first transistor MCBG, and for applying, as a gate control voltage of the first transistor MCBG, a second control voltage equal to or larger than the second voltage VM1 to the non-selected word line and smaller than the first control voltage when the first voltage VPGM to the selected word line is applied to a control gate of a memory cell other than the adjacent memory cell. |
