发明名称 |
METHOD FOR IN-SITU DRY CLEANING, PASSIVATION AND FUNCTIONALIZATION OF GE SEMICONDUCTOR SURFACES |
摘要 |
A method for in-situ dry cleaning of a Ge containing semiconductor surface, other than SiGe. The method is conducted in a vacuum chamber. An oxygen monolayer(s) is formed and promotes removal of essentially all carbon from the surface, and serves to both clean and functionalize the surface. The Ge semiconductor surface is then annealed at a temperature below that which would induce dopant diffusion. |
申请公布号 |
US2014113459(A1) |
申请公布日期 |
2014.04.24 |
申请号 |
US201314061994 |
申请日期 |
2013.10.24 |
申请人 |
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
发明人 |
KAUFMAN-OSBORN TOBIN;KUMMEL ANDREW C.;KIANTAJ KIARASH |
分类号 |
H01L21/324;H01L21/30 |
主分类号 |
H01L21/324 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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