| 摘要 |
A method for manufacturing a dual workfunction semiconductor device using a hybrid gate last integration scheme is described. According to one embodiment, the method includes heat-treating a first high-k film at a first heat-treating temperature to diffuse a first chemical element from a first cap layer into the first high-k film in a device region to form a first modified high-k film. The method further includes a gate-last processing scheme to form recessed features defined by sidewall spacers in the device regions and depositing a second high-k film in the recessed features. Some embodiments include forming an oxygen scavenging layer on the first high-k film, where the heat-treating the first high-k film scavenges oxygen from an interface layer to eliminate or reduce the thickness of an interface layer. |
