发明名称 |
CHAMBER PASTING METHOD IN A PVD CHAMBER FOR REACTIVE RE-SPUTTERING DIELECTRIC MATERIAL |
摘要 |
<p>According to embodiments provide a method for forming dielectric films using physical vapor deposition chamber. Particularly, a pasting process may be performed to apply a conductive coating over inner surfaces of the physical vapor deposition chamber. The pasting process may be performed under adjusted process parameters, such as increased spacing and/or increased chamber pressure. The adjusted parameters allow the conductive coating to be formed more efficiently and effectively.</p> |
申请公布号 |
WO2014062338(A1) |
申请公布日期 |
2014.04.24 |
申请号 |
WO2013US60436 |
申请日期 |
2013.09.18 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
CAO, YONG;NGUYEN, THANH X.;RASHEED, MUHAMMAD M.;TANG, XIANMIN |
分类号 |
H01L21/203 |
主分类号 |
H01L21/203 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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