| 摘要 |
<p>Disclosed is a thermal radiation barrier with a multilayer structure composed of a base layer, an insulation layer, and a protective layer on a substrate. The present invention includes a first amorphous SiZnSnO layer formed as the base layer on the substrate, a silver (Ag) layer formed as the insulation layer on the first amorphous SiZnSnO layer, and a second amorphous SiZnSnO layer formed as the protective layer on the silver (Ag) layer. The content of silicon contained in the first and second amorphous SiZnSnO layer is 0.01-10 wt%.</p> |
