| 摘要 |
PROBLEM TO BE SOLVED: To increase the capacity of a capacitative element, and to suppress variations in the capacity of the capacitative element.SOLUTION: A trench TNH is formed in a multilayered insulating layer MTL. A capacitative element CND is embedded in the trench TNH. A second insulating film INSL2 is an SiCOH film. The trench TNH has a structure in which a first opening OP1 and a second opening OP2 are repeatedly superposed. The first opening OP1 is formed in a first etching stopper film ETS1. The second opening OP2 is formed in a second insulating film INSL2. The second opening OP2 is larger than the first opening OP1 in a plan view, and includes the first opening OP1 in its inside. |
