| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can extend an electrode structuring a capacitive element in a lamination direction and can suppress occurrence of restrictions on routing of wiring.SOLUTION: A first contact 202 and a second contact 222 are positioned on an element separation film 102, face each other, and have horizontal length longer than height. A first conductive pattern 204 is positioned on the first contact 202, and is formed on at least a single-layered wiring layer. A second conductive pattern 224 is positioned on the second contact 222, and faces the first conductive pattern 204. Wiring 400 is formed on an upper wiring layer positioned above the first conductive pattern 204 and the second conductive pattern 224, and is positioned in a region positioned above the first conductive pattern 204 and the second conductive pattern 224. |
