TRENCH GATE METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR AND FABRICATING METHOD THEREOF

摘要

A trench gate metal oxide semiconductor field effect transistor includes a substrate and a gate. The substrate has a trench. The trench is extended downwardly from a surface of the substrate. The gate includes an insertion portion and a symmetrical protrusion portion. The insertion portion is embedded in the trench. The symmetrical protrusion portion is symmetrically protruded over the surface of the substrate.