发明名称 |
Semiconductor Unit with Submount for Semiconductor Device |
摘要 |
A semiconductor unit includes a submount and a chip coupled to the submount. The submount is configured with a base and a plurality of layers between the base and the chip. One of the layers, a heat-spreading electro-conducting sliver (“Ag”) layer, is deposited atop the base. The thickness of the Ag layer is selected so that a cumulative coefficient of thermal expansion of the submount substantially matches that one of the chip. Coupled to the active zone of the chip is a stress-dumping layer made from elastic malleable materials. |
申请公布号 |
US2014110843(A1) |
申请公布日期 |
2014.04.24 |
申请号 |
US201314143444 |
申请日期 |
2013.12.30 |
申请人 |
IIPG PHOTONICS CORPORATION |
发明人 |
OVTCHINNIKOV ALEXANDER;KOMISSAROV ALEXEY;BERISHEV IGOR;TODOROV SVETLAN |
分类号 |
H01L23/00 |
主分类号 |
H01L23/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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