Apparatus and Method for Lithography Patterning

摘要

An apparatus and method for lithography patterning is disclosed. An exemplary method includes receiving a first mask. The method further includes receiving a defect map, the defect map identifying a defect region of a defect of the first mask. The method further includes preparing processing data, the processing data including pattern data of a semiconductor device and data associated with the defect region. The method further includes processing the first mask according to the processing data thereby forming a first portion of a pattern of the semiconductor device on the first mask, the first portion of the pattern excluding the defect region.