发明名称 |
SEMICONDUCTOR DEVICES AND PROCESSING METHODS |
摘要 |
Various embodiments provide a semiconductor device, including a final metal layer having a top side and at least one sidewall; and a passivation layer disposed over at least part of at least one of the top side and the at least one sidewall of the final metal layer; wherein the passivation layer has a substantially uniform thickness. |
申请公布号 |
US2014110838(A1) |
申请公布日期 |
2014.04.24 |
申请号 |
US201213656777 |
申请日期 |
2012.10.22 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
ROGALLI MICHAEL;LEHNERT WOLFGANG |
分类号 |
H01L23/48;H01L21/768;H01L23/498 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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