| 摘要 |
The present invention discloses a semiconductor device and a method for manufacturing the semiconductor device. The semiconductor device includes a gate insulating layer formed on an inner wall of a substrate recess, a work function material layer formed on the gate insulating layer so as to apply a tensile stress or a compressive stress to a channel of a MOS field-effect transistor, and a gate metal formed on the work function material layer. The method for manufacturing the semiconductor device includes forming a work function material layer on a gate insulating layer so as to apply a tensile stress or a compressive stress to a channel of a MOS field-effect transistor, wherein the gate insulating layer is formed on an inner wall of a substrate recess, and depositing a gate metal on the work function material layer. |
