发明名称 ION SOURCE HAVING A SHUTTER ASSEMBLY
摘要 <p>An ion source includes arc chamber housing defining an arc chamber. The arc chamber housing has an extraction plate in a fixed position, and the extraction plate defines a plurality of extraction apertures. The ion source also includes a shutter assembly positioned outside of the arc chamber proximate the extraction plate. The shutter assembly is configured to block at least a portion of one of the plurality of extraction apertures during one time interval. The ion source combined with relative movement of a workpiece to be treated with an ion beam extracted from the ion source enables a two dimensional ion implantation pattern to be formed on the workpiece using only one ion source.</p>
申请公布号 WO2014062515(A1) 申请公布日期 2014.04.24
申请号 WO2013US64626 申请日期 2013.10.11
申请人 VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. 发明人 BLAHNIK, JEFFREY CHARLES;WEAVER, WILLIAM T.
分类号 H01J27/04;H01J27/02;H01J27/08;H01J37/08;H01J37/302;H01J37/317 主分类号 H01J27/04
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