发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
A semiconductor device includes a pipe gate; word lines which are stacked on the pipe gate; first channel layers which penetrate the word lines; and a second channel layer which is formed in the pipe gate to connect the first channel layers and has a concentration of impurity which is higher than that of the first channel layers. |
申请公布号 |
KR20140048653(A) |
申请公布日期 |
2014.04.24 |
申请号 |
KR20120114868 |
申请日期 |
2012.10.16 |
申请人 |
SK HYNIX INC. |
发明人 |
LEE, KI HONG;PYI, SEUNG HO;BIN, JIN HO |
分类号 |
H01L27/115;H01L21/8247 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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