发明名称 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
摘要 A semiconductor device includes a pipe gate; word lines which are stacked on the pipe gate; first channel layers which penetrate the word lines; and a second channel layer which is formed in the pipe gate to connect the first channel layers and has a concentration of impurity which is higher than that of the first channel layers.
申请公布号 KR20140048653(A) 申请公布日期 2014.04.24
申请号 KR20120114868 申请日期 2012.10.16
申请人 SK HYNIX INC. 发明人 LEE, KI HONG;PYI, SEUNG HO;BIN, JIN HO
分类号 H01L27/115;H01L21/8247 主分类号 H01L27/115
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