FABRICATING METHOD FOR ABSORBER LAYER OF SOLAR CELL AND ABSORBER LAYER FABRICATED BY THAT

摘要

The present invention discloses a fabricating method of a precursor of a solar cell and a light absorption layer manufactured thereby capable of reducing the stress of a thin film and the loss of indium and preventing gallium from being segregated to the molybdenum of a substrate after the separation. For example, the fabricating method of the light absorption layer of a CIS (CuInSe2) solar cell comprises; an indium selenide evaporation step of forming indium selenide (In2Se3) as a target and evaporating the indium selenide on the top of the substrate through a sputtering process; a copper gallium and copper selenide evaporation step of forming copper gallium (CuGa) and copper selenide (Cu2Se) as a target and evaporating the copper gallium (CuGa) and the copper selenide (Cu2Se) on the top of the substrate through the sputtering process. [Reference numerals]