| 摘要 |
<p>The present invention relates to a susceptor for epitaxial growing, which is for manufacturing an epitaxial wafer made by performing a reaction of a wafer and a source gas inside a chamber and growing an epitaxial layer, comprising: a pocket provided with an opening on which the wafer is arranged; a ledge portion for supporting the wafer; and a gas control member positioned on the outer circumferential portion of the upper surface of the susceptor opening, wherein the gas control member comprises a first gas control member which is formed on a predetermined area opposite a crystalline direction of the wafer (110), a second gas control member which is formed on a predetermined area opposite the crystalline direction of the wafer (100), and a third gas control member which is formed between the first gas control member and the second gas control member, wherein the first gas control member, the second gas control member, and the third gas control member are formed so that the size of an area formed along the circumference of the wafer are different from each other, wherein the first, second, and third gas control members are formed so that tilt angles thereof from the center of the wafer toward a susceptor direction are different from each other for changing the flow of the gas. As a result, gas flow can be controlled by forming the area on which devices for increasing/decreasing gas flow around the outer circumferential portion of the susceptor (gas control members) differently, thereby reducing the difference in an epilayer on the edge portions of the wafer when forming the epitaxial layer on the semiconductor wafer.</p> |
