| 摘要 |
<p>A semiconductor device is provided with an IGBT element region, a diode element region and a boundary region provided between the IGBT element region that are formed in one semiconductor substrate. A second conductivity type carrier accumulation region formed in a first conductivity type first body region in the IGBT element region. In the boundary region, a second conductivity type third diffusion region formed in the second diffusion region and extends to contiguously contact the carrier accumulation region of the IGBT element region. As a result, during IGBT operation, carriers can be inhibited from moving towards the diode element region across the boundary region. During diode operation, the amount of carrier accumulation in the drift region of the boundary region, and reverse recovery current during diode reverse recovery can be reduced.</p> |
