| 摘要 |
<p>The present invention provides a semiconductor device with high reliability. The semiconductor device is manufactured with high throughput. High productivity is achieved. A gate electrode layer, a gate insulating layer, an oxide semiconductor layer including indium, an insulating layer which is overlapped with the gate electrode layer and touches the upper part of the oxide semiconductor layer, are successively stacked. In a semiconductor device including a transistor which has a source electrode layer and a drain electrode layer which are in contact with the oxide semiconductor layer and the insulating layer, the chlorine concentration of the surface of the insulating layer is 1×1019/cm3 or less. The indium concentration is 2×1019/cm3 or less.</p> |
