method, apparatus and crucible for producing SiC single crystal by solution growth
摘要
A region of an SiC solution in the vicinity of an SiC seed crystal is cooled while suppressing the temperature variation in a peripheral region of the SiC solution. A production apparatus includes a seed shaft (30) and a crucible (14). The seed shaft (30) has a lower end surface (34) to which an SiC seed crystal (36) is to be attached. The crucible (14) accommodates an SiC solution (16). The crucible (14) comprises a main body (140), an intermediate cover (42), and a top cover (44). The main body (140) includes a first cylindrical portion (38), and a bottom portion (40) which is disposed at a lower end portion of the first cylindrical portion (38). The intermediate cover (42) is disposed within the first cylindrical portion (38) and above the liquid level of the SiC solution (16) in the main body (140). The intermediate cover (42) has a first through hole (48) through which the seed shaft (30) is to be passed. The top cover (44) is disposed above the intermediate cover (42). The top cover (44) has a second through hole (52) through which the seed shaft (30) is to be passed.
申请公布号
EP2722422(A1)
申请公布日期
2014.04.23
申请号
EP20120802264
申请日期
2012.06.11
申请人
NIPPON STEEL & SUMITOMO METAL CORPORATION;TOYOTA JIDOSHA KABUSHIKI KAISHA