| 摘要 |
The present invention is related to a Schottky diode device comprising
—� at least a lower and an upper III-nitride layer (4,5) forming a heterojunction therebetween,
—� a 2DEG layer (6) forming or obtainable in the lower of the two layers, so that a 2DEG layer may be formed in the lower of the two layers,
—� an anode (11) comprising a first portion (15) that forms a Schottky barrier contact (10) with the upper III-nitride layer and a second portion (16) that is separated from the upper III-nitride layer by a layer of dielectric material (17), the second portion being located between the anode and the cathode, the dielectric material being configured to pinch off the 2DEG layer in the reverse bias region of the diode, said first and second portion being directly adjoining,
—� a passivation area (7) isolating the anode and cathode from each other. The invention is equally related to a method for producing a device of the invention, possibly in an integrated process for producing a Schottky diode and a HEMT transistor. |
