| 摘要 |
969,530. Semi-conductor devices. SIEMENSSCHUCKERTWERKE A.G. July 31, 1961 [July 30, 1960], No. 27774/61. Heading H1K. The capacitance of a tunnel diode is increased by incorporating in the body a non-tunnelling PN junction in parallel with the tunnel PN junction. Fig. 4 shows a semi-conductor bosy 41 of N-type GaAs having a P-type layer 43 produced by diffusion of Zn at 900‹ C. to which a ball of tin 44 has been alloyed for about 1 minute at 600‹ C. to produce a tunnel junction 45 between the N-type alloyed region and the P-type layer 43. The tin alloyed region contacts N-type region 41 and an ohmic electrode 46 contacts P-layer 43. Alternatively, the alloying may be from a ball containing tin and 5% zinc in which case the tunnel junction is produced between the alloyed region and the original N-type region to which an ohmic electrode is applied. The arrangement adds capacitance to the tunnel diode, so avoiding the tendency to produce high frequency oscillations due to the negative resistance effect of the tunnel diode when used in control circuits. Si, Ge, JnAs, JnSG, JnP, GaSb and GaAs may be used as semi-conductor material. |
