| 摘要 |
A method of forming a top-gate transistor over a substrate comprises: forming a source and a drain electrode; forming an organic stack over the source and drain electrodes comprising an organic semiconductor layer and an organic dielectric layer over the organic semiconductor layer; forming a gate bi-layer electrode comprising a first layer of a first material and a second layer of a different second material; selectively depositing regions of a mask material over the gate bi-layer electrode; performing a first plasma etch step to remove portions of the first gate layer using the mask material as a mask; and performing a second plasma etch step to remove portions of the second gate layer and organic stack using the first gate layer as a mask, thereby patterning the gate bi-layer electrode and the organic stack. |
