SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF

摘要

Provided are a semiconductor device and a manufacturing method thereof. The semiconductor device includes a substrate on which a first area and a second area are defined; an inter-layer insulation layer which is formed on the substrate and includes a first trench placed on the first area and a second trench placed on the second area; a first transistor which includes a first gate insulation layer formed on the bottom surface of the first trench and having a first thickness, a reaction prevention layer formed on the first gate insulation layer on the bottom surface of the first trench, and a first alternative metal gate structure formed on the reaction prevention layer of the first trench to fill the first trench; and a second transistor which includes a second gate insulation layer formed in the second trench and having a second thickness thinner than the first thickness, and a second alternative metal gate structure formed on the second gate insulation layer in the second trench.