SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

Provided are a semiconductor device and a manufacturing method thereof. The method for manufacturing the semiconductor device comprises forming, on a substrate, a polysilicon film in which a P-conductive first impurity is doped; forming polysilicon patterns and a trench by etching the polysilicon film and the substrate; covering part of the trench, and forming a device separation pattern which covers lower sides of the polysilicon patterns; heating the polysilicon patterns exposed by the device separation pattern under the atmosphere of response gas comprising a P-conductive second impurity; forming a dielectric film and a conductive film on the polysilicon patterns and the device separation pattern; and forming a control gate, a dielectric pattern, and floating gates by etching the conductive film, the dielectric film, and the polysilicon patterns in one direction.