| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor substrate, the method producing a high quality single crystal film of cubical crystal. SOLUTION: The method of manufacturing a semiconductor substrate 5 includes: a step of forming a carbon layer mainly containing carbon, on a surface 1a of a substrate (silicon substrate 1) with a single crystal silicon on at least one surface; and a step of irradiating the carbon layer with electromagnetic wave, heating it, and forming a carbonizing buffer layer 3 containing silicon carbide. COPYRIGHT: (C)2011,JPO&INPIT |
