SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

摘要

Disclosed are a semiconductor device and a manufacturing method thereof. The semiconductor device includes: a GaN substrate; a plurality of semiconductor laminates which are located on the GaN substrate; and an insulation pattern which is located between the GaN substrate and the semiconductor laminates and insulates the semiconductor laminates from the GaN substrate. A current leakage is prevented from the semiconductor laminates to the substrate by insulating the semiconductor laminates from the substrate using the insulation patterns on the GaN substrate.