Coding with punctured polar codes for nonvolatile memories
摘要
An operating method of a nonvolatile memory controller includes selecting bits of code word of a polar code to be punctured; detecting locations of incapable bits of an input word which have a high error probability owing to puncturing based on locations of the bits to be punctured and on a structure of a generation matrix; refreezing the input word by adjusting the location of frozen bits such that frozen bits and incapable bits of the input word overlap; generating input word bits by inserting frozen bits into the information word bits; generating the code word from the input word bits using based on a generation matrix; generating output bits by puncturing the code word based on locations of the bits to be punctured; and transmitting the output bits to a nonvolatile memory device.
申请公布号
EP2722993(A1)
申请公布日期
2014.04.23
申请号
EP20130187875
申请日期
2013.10.09
申请人
SAMSUNG ELECTRONICS CO., LTD;POSTECH ACADEMY-INDUSTRY FOUNDATION