发明名称 Coding with punctured polar codes for nonvolatile memories
摘要 An operating method of a nonvolatile memory controller includes selecting bits of code word of a polar code to be punctured; detecting locations of incapable bits of an input word which have a high error probability owing to puncturing based on locations of the bits to be punctured and on a structure of a generation matrix; refreezing the input word by adjusting the location of frozen bits such that frozen bits and incapable bits of the input word overlap; generating input word bits by inserting frozen bits into the information word bits; generating the code word from the input word bits using based on a generation matrix; generating output bits by puncturing the code word based on locations of the bits to be punctured; and transmitting the output bits to a nonvolatile memory device.
申请公布号 EP2722993(A1) 申请公布日期 2014.04.23
申请号 EP20130187875 申请日期 2013.10.09
申请人 SAMSUNG ELECTRONICS CO., LTD;POSTECH ACADEMY-INDUSTRY FOUNDATION 发明人 SHIN, DONG-MIN;YANG, KYEONGCHEOL;LIM, SEUNG-CHAN;LEE, KIJUN;KONG, JUNJIN
分类号 H03M13/13;H03M13/11 主分类号 H03M13/13
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