发明名称 |
Copper electroplating process for uniform across wafer deposition and void free filling on ruthenium coated wafers |
摘要 |
Disclosed are methods of depositing and annealing a copper seed layer. A copper seed layer may be deposited on a ruthenium layer disposed on a surface of a wafer and on features in the wafer. The thickness of the ruthenium layer may be about 40 Angstroms or less. The copper seed layer may be annealed in a reducing atmosphere having an oxygen concentration of about 2 parts per million or less. Annealing the copper seed layer in a low-oxygen atmosphere may improve the properties of the copper seed layer. |
申请公布号 |
US8703615(B1) |
申请公布日期 |
2014.04.22 |
申请号 |
US201213367710 |
申请日期 |
2012.02.07 |
申请人 |
PONNUSWAMY THOMAS A.;SUKAMTO JOHN H.;REID JONATHAN D.;MAYER STEVEN T.;ZHU HUANFENG;NOVELLUS SYSTEMS, INC. |
发明人 |
PONNUSWAMY THOMAS A.;SUKAMTO JOHN H.;REID JONATHAN D.;MAYER STEVEN T.;ZHU HUANFENG |
分类号 |
H01L21/44 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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