发明名称 |
Barrier structures and methods for through substrate vias |
摘要 |
Through substrate via barrier structures and methods are disclosed. In one embodiment, a semiconductor device includes a first substrate including an active device region disposed within isolation regions. A through substrate via is disposed adjacent to the active device region and within the first substrate. A buffer layer is disposed around at least a portion of the through substrate via, wherein the buffer layer is disposed between the isolation regions and the through substrate via. |
申请公布号 |
US8704375(B2) |
申请公布日期 |
2014.04.22 |
申请号 |
US20090613417 |
申请日期 |
2009.11.05 |
申请人 |
LIU MAX;HSU CHAO-SHUN;TSENG YA-WEN;CHIOU WEN-CHIH;WU WENG-JIN;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LIU MAX;HSU CHAO-SHUN;TSENG YA-WEN;CHIOU WEN-CHIH;WU WENG-JIN |
分类号 |
H01L23/48;H01L21/768;H01L23/498;H01L29/417 |
主分类号 |
H01L23/48 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|