发明名称 Sense amplifier scheme for low voltage SRAM and register files
摘要 In at least one embodiment, a sense amplifier circuit includes a pair of bit lines, a sense amplifier output, a keeper circuit, and a noise threshold control circuit. The keeper circuit is coupled to the pair of bit lines and includes an NMOS transistor coupled between a power node and a corresponding one of the pair of bit lines. The keeper circuit is sized to supply sufficient current to compensate a leakage current of the corresponding bit line and configured to maintain a voltage level of the corresponding bit line. The noise threshold control circuit is connected to the sense amplifier output and the pair of bit lines. The noise threshold control circuit comprises a half-Schmitt trigger circuit or a Schmitt trigger circuit.
申请公布号 US8705305(B2) 申请公布日期 2014.04.22
申请号 US201213658060 申请日期 2012.10.23
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 UPPUTURI BHARATH
分类号 G11C7/02 主分类号 G11C7/02
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