发明名称 |
Activation treatments in plating processes |
摘要 |
A method of forming a device includes performing a first plating process to form a first metallic feature, and performing an activation treatment to a surface of the first metallic feature in an activation treatment solution, wherein the activation treatment solution includes a treatment agent in de-ionized (DI) water. After the step of performing the activation treatment, performing a second plating process to form a second metallic feature and contacting the surface of the first metallic feature. |
申请公布号 |
US8703546(B2) |
申请公布日期 |
2014.04.22 |
申请号 |
US20100784314 |
申请日期 |
2010.05.20 |
申请人 |
LIN CHIH-WEI;CHENG MING-DA;HO MING-CHE;LIU CHUNG-SHI;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LIN CHIH-WEI;CHENG MING-DA;HO MING-CHE;LIU CHUNG-SHI |
分类号 |
H01L21/82;H01L21/288 |
主分类号 |
H01L21/82 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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