发明名称 Activation treatments in plating processes
摘要 A method of forming a device includes performing a first plating process to form a first metallic feature, and performing an activation treatment to a surface of the first metallic feature in an activation treatment solution, wherein the activation treatment solution includes a treatment agent in de-ionized (DI) water. After the step of performing the activation treatment, performing a second plating process to form a second metallic feature and contacting the surface of the first metallic feature.
申请公布号 US8703546(B2) 申请公布日期 2014.04.22
申请号 US20100784314 申请日期 2010.05.20
申请人 LIN CHIH-WEI;CHENG MING-DA;HO MING-CHE;LIU CHUNG-SHI;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 LIN CHIH-WEI;CHENG MING-DA;HO MING-CHE;LIU CHUNG-SHI
分类号 H01L21/82;H01L21/288 主分类号 H01L21/82
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