发明名称 Method for chemical planarization and chemical planarization apparatus
摘要 According to one embodiment, a method is disclosed for chemical planarization. The method can include forming a surface layer on a to-be-processed film having irregularity. The surface layer binds to or adsorbs onto the to-be-processed film along the irregularity to suppress dissolution of the to-be-processed film. The method can include planarizing the to-be-processed film in a processing solution dissolving the to-be-processed film, by rotating the to-be-processed film and a processing body while the to-be-processed film contacting the processing body via the surface layer, removing the surface layer on convex portions of the irregularity while leaving the surface layer on concave portions of the irregularity and making dissolution degree of the convex portions larger than dissolution degree of the concave portions.
申请公布号 US8703004(B2) 申请公布日期 2014.04.22
申请号 US201213423018 申请日期 2012.03.16
申请人 MATSUI YUKITERU;KODERA MASAKO;TOMITA HIROSHI;MINAMIHABA GAKU;GAWASE AKIFUMI;KABUSHIKI KAISHA TOSHIBA 发明人 MATSUI YUKITERU;KODERA MASAKO;TOMITA HIROSHI;MINAMIHABA GAKU;GAWASE AKIFUMI
分类号 C03C15/00 主分类号 C03C15/00
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