发明名称 |
Method and apparatus for developing process |
摘要 |
The present disclosure involves a method of fabricating a semiconductor device. The method includes providing a substrate having a material layer formed thereon; depositing a photoresist layer on the material layer, the photoresist layer having a vertical dimension; exposing a region of the photoresist layer to radiation, the exposed region having a horizontal dimension, wherein a first ratio of the vertical dimension to the horizontal dimension exceeds a predetermined ratio; and developing the photoresist layer to remove the exposed region at least in part through applying a developer solution containing a first chemical and a second chemical, wherein: the first chemical is configured to dissolve the exposed region of the photoresist layer through a chemical reaction; the second chemical is configured to enhance flow of the first chemical that comes into contact with the photoresist layer; and an optimized second ratio exists between the first chemical and the second chemical. |
申请公布号 |
US8703392(B2) |
申请公布日期 |
2014.04.22 |
申请号 |
US201213602445 |
申请日期 |
2012.09.04 |
申请人 |
LIU YU-LUN;LIU CHIA-CHU;CHEN KUEI-SHUN;WANG CHUNG-MING;SU YING-HAO;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LIU YU-LUN;LIU CHIA-CHU;CHEN KUEI-SHUN;WANG CHUNG-MING;SU YING-HAO |
分类号 |
G03F7/26;B05B7/00;B05C11/00 |
主分类号 |
G03F7/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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