发明名称 Pattern formation method
摘要 According to one embodiment, a pattern formation method contains: forming first guides by changing a surface energy of an underlayer material by transferring a pattern of a photomask onto the underlayer material by exposure, and forming second guides by changing the surface energy of the underlayer material between the first guides by diffraction of exposure light generated from the exposure; applying a block copolymer containing a plurality of types of polymer block chains onto the underlayer material; and causing any one of the polymer block chains to form a pattern in accordance with the first and second guides by microphase separation of the block copolymer by a heat treatment.
申请公布号 US8703407(B2) 申请公布日期 2014.04.22
申请号 US201113188027 申请日期 2011.07.21
申请人 SEINO YURIKO;KIKUCHI YUKIKO;KABUSHIKI KAISHA TOSHIBA 发明人 SEINO YURIKO;KIKUCHI YUKIKO
分类号 G03F7/20 主分类号 G03F7/20
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