发明名称 |
Memory device including transistor array with shared plate channel and method for making the same |
摘要 |
The present invention relates to memory devices incorporating therein a novel memory cell architecture which includes an array of selection transistors sharing a common channel and method for making the same. A memory device comprises a semiconductor substrate having a first type conductivity, a plurality of drain regions and a common source region separated by a common plate channel in the substrate, and a selection gate disposed on top of the plate channel with a gate dielectric layer interposed therebetween. The plurality of drain regions and the common source region have a second type conductivity opposite to the first type provided in the substrate. |
申请公布号 |
US8704206(B2) |
申请公布日期 |
2014.04.22 |
申请号 |
US201213356633 |
申请日期 |
2012.01.23 |
申请人 |
SATOH KIMIHIRO;HUAI YIMING;ZHANG JING;AVALANCHE TECHNOLOGY INC. |
发明人 |
SATOH KIMIHIRO;HUAI YIMING;ZHANG JING |
分类号 |
H01L29/06;H01L21/336;H01L29/78;H01L47/00 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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