发明名称 Optical semiconductor device
摘要 The present invention is intended to provide a compact and simple optical semiconductor device that reduces crosstalk (leakage current) between light receiving elements. According to the present invention, since a back surface electrode is a mirror-like thin film, crosstalk to an adjacent light receiving element can be suppressed, thereby reducing a detection error of a light intensity. By disposing a patterned back surface electrode or by disposing an ohmic electrode at the bottom of an insulating film over the whole back surface, contact resistance on the back surface can be reduced. By using the optical semiconductor elements with a two-dimensional arrangement and by using a mirror-like thin film as the back surface electrode, crosstalk can be reduced. By accommodating the optical semiconductor elements in the housing in a highly hermetic condition, the optical semiconductor elements can be protected from an external environment.
申请公布号 US8704322(B2) 申请公布日期 2014.04.22
申请号 US201213356104 申请日期 2012.01.23
申请人 DOI YOSHIYUKI;MURAMOTO YOSHIFUMI;OHYAMA TAKAHARU;NIPPON TELEGRAPH AND TELEPHONE CORPORATION;NTT ELECTRONICS CORPORATION 发明人 DOI YOSHIYUKI;MURAMOTO YOSHIFUMI;OHYAMA TAKAHARU
分类号 H01L31/0232 主分类号 H01L31/0232
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