发明名称 |
Advanced CMOS using super steep retrograde wells |
摘要 |
The present invention is a method for forming super steep doping profiles in MOS transistor structures. The method comprises forming a carbon containing layer (110) beneath the gate dielectric (50) and source and drain regions (80) of a MOS transistor. The carbon containing layer (110) will prevent the diffusion of dopants into the region (40) directly beneath the gate dielectric layer (50). |
申请公布号 |
US8703568(B2) |
申请公布日期 |
2014.04.22 |
申请号 |
US201213359125 |
申请日期 |
2012.01.26 |
申请人 |
BABCOCK JEFFREY A.;PINTO ANGELO;BALSTER SCOTT;HAEUSLER ALFRED;HOWARD GREGORY E.;TEXAS INSTRUMENTS INCORPORATED |
发明人 |
BABCOCK JEFFREY A.;PINTO ANGELO;BALSTER SCOTT;HAEUSLER ALFRED;HOWARD GREGORY E. |
分类号 |
H01L21/336;H01L21/265;H01L21/8238;H01L29/10;H01L29/36;H01L29/786 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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