| 摘要 |
PROBLEM TO BE SOLVED: To provide a capacitance pressure sensor capable of minimizing parasitic capacitance and a manufacturing method of the capacitance pressure sensor.SOLUTION: A capacitance pressure sensor 10 comprises: a movable electrode 11 and a fixed electrode 12 composed of a silicon substrate; and an insulation layer 13 bonding both electrodes. The movable electrode 11 includes a displaceable pressure-sensitive diaphragm 14, and a junction 16 positioned in the periphery of the pressure-sensitive diaphragm 14. The capacitance pressure sensor 10 further comprises, on the silicon substrate, a wiring layer 24 led out from the fixed electrode 12 or the movable electrode 11; a first electrode pad 25 provided on the wiring layer 24; an insulative level difference part 21 formed so that a gap between the wiring layer 24 and the fixed electrode 12 or the movable electrode 11 is larger than the thickness of the insulation layer 13. The first electrode pad 25 is arranged so as to overlap the level difference part 21 in plan view. |
