SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device which includes a vertical trench-gate MOS transistor excellent in process stability.SOLUTION: A semiconductor integrated circuit device which includes a cell part 1 including a plurality of vertical MOS transistors and a cell part 2 including a plurality of complementary lateral MOS transistors comprises: a vertical dummy transistor which has a structure the same with a trench gate of the vertical MOS transistor and which is formed in a guard ring region 3 formed so as to surround the cell part 1 and the cell part 2.