SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device which has low on-resistance and enables normally-off.SOLUTION: A semiconductor device comprises: an electron transit layer formed on a substrate; an electron supply layer formed on the electron transit layer; a doping layer which is formed on the electron supply layer and formed from a nitride semiconductor doped by an impurity element to become a p-type and C; a p-type layer which is formed on the doping layer and formed from a nitride semiconductor doped by an impurity element to become a p-type; a gate electrode formed on the p-type layer; and a source electrode and a drain electrode which are formed on the doping layer or the electron supply layer. The p-type layer is formed in a region just below the gate electrode. A concentration of C doped in the doping layer is not less than 1×10cmand not more than 1×10cm.