SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To improve reliability of a semiconductor device using a nitride semiconductor.SOLUTION: The semiconductor device comprises: a channel layer CH formed on a substrate SUB; a barrier layer BR formed on the channel layer CH; a cap layer CP formed on the barrier layer BR; a gate electrode GE formed on the cap layer CP; a nitride semiconductor layer NS formed on the barrier layer BR in a region where the cap layer CP is not formed; and a source electrode SE and a drain electrode DE which are formed on the nitride semiconductor layer NS. The cap layer CP is a p-type semiconductor layer. The nitride semiconductor layer NS2 is composed of a material of the same type with the cap layer CP and is in an intrinsic state or in an n-type state.