| 摘要 |
PROBLEM TO BE SOLVED: To provide a pass gate using a TFET and having a relaxed restriction of an operation voltage.SOLUTION: A pass gate provided between a data holding portion and a bit line in an SRAM cell, includes a first tunnel transistor and a first diode connected in series between the data holding portion and the bit line, and a second tunnel transistor and a second diode connected in series between the data holding portion and the bit line and connected in parallel to the first tunnel transistor and the first diode. Gate electrodes of the first tunnel transistor and the second tunnel transistor are connected to a word line, and the first diode and the second diode have rectification reverse to each other between the data holding portion and the bit line. |
