发明名称 |
COMPOSITION FOR FORMATION OF SEMICONDUCTOR SUBSTRATE PASSIVATION FILM, SEMICONDUCTOR SUBSTRATE WITH PASSIVATION FILM AND MANUFACTURING METHOD THEREOF, AND SOLAR BATTERY ELEMENT AND MANUFACTURING METHOD THEREOF |
摘要 |
PROBLEM TO BE SOLVED: To provide a composition for formation of a semiconductor substrate passivation film which makes possible to form a semiconductor substrate passivation film and a p-type diffusion layer in a desired shape by a simple and convenient method.SOLUTION: A composition for formation of a semiconductor substrate passivation film comprises: an organic aluminum compound expressed by the general formula (I); and glass powder including an acceptor element. [Formula (I)], where R's represent an alkyl group with 1-8 carbon atoms independently of each other; n represents an integer of 0-3; Xand Xrepresent an oxygen atom or a methylene group independently of each other; and R, Rand Rrepresent a hydrogen atom or an alkyl group with 1-8 carbon atoms independently of each other. |
申请公布号 |
JP2014072436(A) |
申请公布日期 |
2014.04.21 |
申请号 |
JP20120218387 |
申请日期 |
2012.09.28 |
申请人 |
HITACHI CHEMICAL CO LTD |
发明人 |
TANAKA TORU;YOSHIDA MASATO;NOJIRI TAKESHI;KURATA YASUSHI;ODA AKIHIRO;ADACHI SHUICHIRO;HAYASAKA TAKESHI |
分类号 |
H01L31/06 |
主分类号 |
H01L31/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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