发明名称 COMPOSITION FOR FORMATION OF SEMICONDUCTOR SUBSTRATE PASSIVATION FILM, SEMICONDUCTOR SUBSTRATE WITH PASSIVATION FILM AND MANUFACTURING METHOD THEREOF, AND SOLAR BATTERY ELEMENT AND MANUFACTURING METHOD THEREOF
摘要 PROBLEM TO BE SOLVED: To provide a composition for formation of a semiconductor substrate passivation film which makes possible to form a semiconductor substrate passivation film and a p-type diffusion layer in a desired shape by a simple and convenient method.SOLUTION: A composition for formation of a semiconductor substrate passivation film comprises: an organic aluminum compound expressed by the general formula (I); and glass powder including an acceptor element. [Formula (I)], where R's represent an alkyl group with 1-8 carbon atoms independently of each other; n represents an integer of 0-3; Xand Xrepresent an oxygen atom or a methylene group independently of each other; and R, Rand Rrepresent a hydrogen atom or an alkyl group with 1-8 carbon atoms independently of each other.
申请公布号 JP2014072436(A) 申请公布日期 2014.04.21
申请号 JP20120218387 申请日期 2012.09.28
申请人 HITACHI CHEMICAL CO LTD 发明人 TANAKA TORU;YOSHIDA MASATO;NOJIRI TAKESHI;KURATA YASUSHI;ODA AKIHIRO;ADACHI SHUICHIRO;HAYASAKA TAKESHI
分类号 H01L31/06 主分类号 H01L31/06
代理机构 代理人
主权项
地址