| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which a good quality corundum crystal film is formed.SOLUTION: According to the present embodiment, a semiconductor device formed by a base substrate having a corundum crystal structure, a semiconductor layer having the corundum crystal structure and an insulation film having the corundum crystal structure is provided. A material having the corundum crystal structure includes numerous oxide films and is capable of not only functioning as an insulation film but also achieving a good quality semiconductor layer and insulation film on the base substrate because all of the base substrate, the semiconductor layer and the insulation film has the corundum crystal structure. |
